SSD 850 EVO 2.5" SATA III 120GB

ABOUT THIS PRODUCT

Upgrade virtually every aspect of your computer’s performance with Samsung’s new 850 EVO, designed with state-of-the-art SSD advancements including 3D V-NAND technology. As the next generation beyond the bestselling 840 EVO, you’ll get the 850 EVO’s new 3 dimensional chip design that enables superior performance, greater reliability and superior energy efficiency so you can work and play faster and longer than ever before.

Manufacturer Part Number
MZ-75E120B/AM
EAN/UPC
0887276086064,887276086064
Full Product Specifications

Note:

  • The full product specifications below are from the manufacturer and may contain information related to other package quantities that will not apply to the product that you are reviewing. Please confirm the actual content and/or package quantity from the main product specifications page.
  • These specifications may represent the entire product series/model/line to which this product belongs with specific configuration differences between the individual products stated.
  • These specifications may have been copied from the same product in other region/country in which case there might be minor differences in region-specific data such as Input Voltage, Terms of Warranty etc.

FULL SPECIFICATIONS

Type

  • PRODUCT TYPE

    Solid State Drive

  • INTERFACE

    SATA 6Gb/s Interface, compatible with SATA 3Gb/s & SATA 1.5Gb/s interface

Application 

  • CONSUMER

    Client PCs

Storage

  • CAPACITY

    120 GB (1GB=1 Billionbyte by IDEMA)
    * Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)

Features

  • SEQUENTIAL READ SPEED

    Up to 540 MB/sec Sequential Read: 
    * Performance may vary based on system hardware & configuration

  • SEQUENTIAL WRITE SPEED

    Up to 520 MB/sec Sequential Write: 
    * Performance may vary based on system hardware & configuration

  • RANDOM READ SPEED

    Random Read (4KB, QD32): 
    Up to 94,000 IOPS Random Read 
    * Performance may vary based on system hardware & configuration 

    Random Read (4KB, QD1):
    Up to 10,000 IOPS Random Read 
    * Performance may vary based on system hardware & configuration

  • RANDOM WRITE SPEED

    Random Write (4KB, QD32): 
    Up to 88,000 IOPS Random Write 
    * Performance may vary based on system hardware & configuration 

    Random Write (4KB, QD1):
    Up to 40,000 IOPS Random Write 
    * Performance may vary based on system hardware & configuration

  • MEMORY SPEED

    Samsung 32 layer 3D V-NAND
    Samsung 256 MB Low Power DDR3 SDRAM

  • CONTROLLER

    Samsung MGX Controller

  • TRIM SUPPORT

    Yes

  • AES ENCRYPTION

    AES 256 bit Encryption (Class 0) , TCG/Opal, IEEE1667 (Encrypted drive)

General

  • POWER CONSUMPTION (W)

    50 mWatts 
    * Actual power consumption may vary depending on system hardware & configuration 

    *Average: 2.1 Watts *Maximum: 2.4 Watts (Burst mode) 
    * Actual power consumption may vary depending on system hardware & configuration

  • VOLTAGE

    5V ± 5% Allowable voltage

  • RELIABILITY (MTBF)

    2 Million Hours Reliability (MTBF)

Environmental Specs

  • OPERATING TEMPERATURE

    32ºF - 158ºF

Form Factor

  • PRODUCT

    2.5 inch Form Factor

Dimensions (W x H x D)

  • PRODUCT

    3.94" x 2.75" x 0.27"

Weight

  • PRODUCT

    0.09 lb.

Warranty

  • PRODUCT

    5 Years Limited Warranty or 75TBW Limited Warranty