The new mSATA™ modules utilise Toshiba’s Advanced 19nm (A19nm) toggle 2.0 MLC (multi level cell) NAND, which delivers major advances in performance and power efficiency. Toshiba’s HG6 series drives are available in capacities ranging from 60 to 512GB and dramatically accelerate application start times to provide an improved computing experience.
The drives are fitted with a 6Gbit/s SATA 3.1 interface and include Adaptive Size SLC Write cache technology and optional Self Encrypting feature compliant to TCG-Opal 2.0 (THNSFJxxxGMCU). All HG6 models incorporate Toshiba’s robust and highly efficient Quadruple Swing-By Code (QSBC™) for improved error correction and reliability.
Note:
Specifications:
Model: THNSNJ256GMCU
FUNCTIONAL SPECIFICATIONS
Capacity: 256 GByte
Memory: Toshiba A19nm MLC NAND Flash Memory
Performance: Max. seq. read (2.5'' 512 GB model) 534 MB/s (510 MiB/s)
Performance: Max. seq. write (2.5'' 512 GB model) 482 MB/s (460 MiB/s)
Interface: ACS-2, SATA Rev. 3.1 (1.5/3/6 Gbit/s)
Connector Type: mSATATM
ELECTRICAL CHARACTERISTICS
Supply voltage: 3.3 V +/- 5 %
Power consumption (Largest capacity model): Active: 2.7 W typ. Idle: 65 mW typ.
PHYSICAL SPECIFICATIONS
Size: 50.95 mm x 30 mm x 3.95 mm
Weight (typ.): 7.3 - 7.7 g
ENVIRONMENTAL CONDITIONS
Components Temperature (operating): From 0 °C to +80 °C
Temperature (non-operating): From -40 °C to +85 °C
Vibration (operating): 10 - 2,000Hz: 20 G
Vibration (non-operating): 10 - 2,000Hz: 20 G
Shock (operating): 0.5 ms: 1500 G
Shock (non-operating): 0.5 ms: 1500 G
RELIABILITY
MTTF: 1,500,000 Hours
FEATURES
Additional Features:
Translation mode which enables any drive configuration
28-bit LBA mode commands and 48-bit LBA mode commands support
Multi word DMA, Ultra-DMA, Advanced PIO mode
Automatic retries and corrections for read errors
SED models are based on TCG OPAL Ver. 2.0 standard
SED models also support Wipe Technology